Factors affecting two-dimensional dopant profiles obtained by transmission electron microscopy of etchedp-njunctions in Si
作者:
Suneeta S. Neogi,
David Venables,
Zhiyong Na,
Dennis M. Maher,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1998)
卷期:
Volume 16,
issue 1
页码: 471-475
ISSN:1071-1023
年代: 1998
DOI:10.1116/1.589832
出版商: American Vacuum Society
关键词: Si
数据来源: AIP
摘要:
Transmission electron microscopy (TEM) was used to characterize image contrast obtained from doping-dependent etching ofp-njunctions in silicon. The local variations in crystal thickness give rise to the appearance of thickness fringes which may be interpreted as two-dimensional iso-concentration contours that map the dopant distribution. The samples used for the study consisted of solid source diffusions of boron into substrates of varying resistivities of bothn-andp-type. The factors which affect the interpretation of dopant profiles obtained from selective chemical etching of cross section TEM samples is addressed. One-dimensional chemical dopant concentration data were derived from secondary ion mass spectroscopy and one-dimensional carrier concentration data were derived from spreading resistance profiling.
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