Experimental results for the electrodiffusion of antimony into ⟨111⟩p‐type silicon through thin SiO2films are reported.C‐Vplots of metal‐oxide‐semiconductor capacitors show thatn‐pjunctions are formed by the electrochemical process. The electrolytical doping profile is determined fromC‐Vdata in the depletion regime and it shows that the amount of antimony impurity ions in silicon can be controlled by means of the current‐time product of the electrodiffusion process.