New ultrafast switching mechanism in semiconductor heterostructures
作者:
K. Hess,
T. K. Higman,
M. A. Emanuel,
J. J. Coleman,
期刊:
Journal of Applied Physics
(AIP Available online 1986)
卷期:
Volume 60,
issue 10
页码: 3775-3777
ISSN:0021-8979
年代: 1986
DOI:10.1063/1.337540
出版商: AIP
数据来源: AIP
摘要:
A new switching mechanism in a two‐terminal semiconductor heterolayer structure is proposed which capitalizes on nonlinear electron temperature effects in adjacent heterolayers. The estimated switching speed of an optimized heterostructure hot electron diode should be extremely fast, perhaps as fast as 200 fs. Data are presented on prototype devices which show the expected negative differential resistance and indicate that the basic physical model is correct.
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