Capacitance spectroscopy of degraded GaAsP light‐emitting diodes
作者:
B. Tell,
C. van Opdorp,
期刊:
Journal of Applied Physics
(AIP Available online 1978)
卷期:
Volume 49,
issue 5
页码: 2973-2977
ISSN:0021-8979
年代: 1978
DOI:10.1063/1.325140
出版商: AIP
数据来源: AIP
摘要:
We employ the technique of deep‐level transient spectroscopy to study a series of rapidly degraded GaAs0.6P0.4LED’s. We observe a dramatic increase in the density of defects, two of which appear to be effective recombination centers. The cross‐section measurements for these centers are equipment limited, but even these values limit the nonradiative minority‐carrier lifetime to less than 20 ns.
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