Diffusion of ion‐implanted gold inp‐type silicon
作者:
S. Coffa,
L. Calcagno,
S. U. Campisano,
G. Calleri,
G. Ferla,
期刊:
Journal of Applied Physics
(AIP Available online 1988)
卷期:
Volume 64,
issue 11
页码: 6291-6295
ISSN:0021-8979
年代: 1988
DOI:10.1063/1.342087
出版商: AIP
数据来源: AIP
摘要:
We report detailed measurements of gold concentration profiles in 〈100〉,p‐type silicon. The gold has been introduced by ion implantation and diffused in the temperature range 1073–1473 K and for times ranging from 60 s to 100 h. The resistivity profiles have been converted into gold concentration profiles by using the recently measured value of the entropy factor for the ionization of the gold donor level. The measured profiles and their time dependence can be accounted for by the kick‐out diffusion mechanism. The activation energies for the effective diffusion coefficient and for the gold substitutional concentration are 1.7±0.1 and 1.6±0.1 eV, respectively. The resulting flux of silicon self‐interstitials is thus described by an activation energy of 3.3±0.1 eV.
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