Oscillating contrast in room-temperature scanning tunneling microscope images of localized charges in III–V semiconductor cleavage surfaces
作者:
C. Domke,
M. Heinrich,
Ph. Ebert,
K. Urban,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1998)
卷期:
Volume 16,
issue 5
页码: 2825-2832
ISSN:1071-1023
年代: 1998
DOI:10.1116/1.590278
出版商: American Vacuum Society
关键词: GaAs:Si
数据来源: AIP
摘要:
Positively and negatively charged defects and dopant atoms inn-doped GaAs(110) surfaces give rise, at room temperature, in occupied-state scanning tunneling microscope images to a bright elevation, which is surrounded by a dark depression ring. This oscillating contrast is not observed in empty-state images. A similar effect is found onn-doped GaP(110) surfaces. A simulation of the contrast induced by localized charges on (110) surfaces of III–V semiconductors suggests that the oscillation in room-temperature scanning tunneling microscope images can be explained as the image of the local potential change (screened Coulomb potential) induced by the presence of the charge.
点击下载:
PDF
(648KB)
返 回