The effects of built‐in electric field on the performance of compositionally gradedP‐on‐nHgCdTe heterojunction photodiodes
作者:
D. Rosenfeld,
V. Garber,
G. Bahir,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 77,
issue 2
页码: 925-933
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.359020
出版商: AIP
数据来源: AIP
摘要:
The results of a study of the optical and electrical performance ofP‐on‐nHgCdTe heterojunctions, with a linear gradient in composition, are presented. First presented is a solution of the one‐dimensional continuity equation which includes the spatial dependencies of the material properties, such as absorption coefficient, band gap, and intrinsic carrier concentration, in the graded layer. Using the above solution, diodes with different grading profiles (and hence different electric fields), but with the same cutoff wavelength, are compared. The advantages of the built‐in electric field formed by the grading in composition are presented and discussed. It is shown that the major consequence of the electric field is the reduction of the effects caused by the imperfect CdTe/HgCdTe interface at the backside. ©1995 American Institute of Physics.
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