首页   按字顺浏览 期刊浏览 卷期浏览 Fabrication of a multilevel structure for nanophysics in two‐dimensional electron gases
Fabrication of a multilevel structure for nanophysics in two‐dimensional electron gases

 

作者: Yeong‐Ah Soh,   Gregory L. Snider,   Michael J. Rooks,   Harold G. Craighead,   Jeevak Parpia,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1994）
卷期: Volume 12, issue 3  

页码: 1372-1376

 

ISSN:1071-1023

 

年代: 1994

 

DOI:10.1116/1.587301

 

出版商: American Vacuum Society

 

关键词: NANOSTRUCTURES;FABRICATION;TERNARY COMPOUNDS;GALLIUM ARSENIDES;ALUMINIUM ARSENIDES;PMMA;ELECTRON GAS;GATES;TRANSPORT PROCESSES;GaAs;(Al,Ga)As

 

数据来源: AIP

 

摘要:

The fabrication process of a multilevel structure with a central electrode isolated from the outer gates is presented. Polymethylmethacrylate is used as the dielectric material that provides the electrical isolation. Dot gates with a diameter as small as 30 nm aligned in the middle of 0.10 μm split gates have been fabricated. The operation of the dot gates has been tested by conductance measurements through the constriction formed by the split gates.

 

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