GaAs corrugation pattern with submicron pitch grown by Ar ion laser‐assisted metalorganic molecular beam epitaxy
作者:
Takeshi Yamada,
Ryuzo Iga,
Hideo Sugiura,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 8
页码: 958-960
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.106314
出版商: AIP
数据来源: AIP
摘要:
Epitaxial growth of a GaAs film with a fine pattern is realized by Ar ion laser irradiation during metalorganic molecular beam epitaxy. Corrugation patterns with 0.85 and 4 &mgr;m pitch are successfully grown on a GaAs substrate using a holographic interference technique, i.e., irradiation of the interference fringe pattern of two laser beams. The cross‐section profile of the pattern is similar to a sinusoidal curve, expected from laser power distribution of interference. Vibration of a substrate during epitaxial growth is discussed comparing obtained pattern height to the theoretical one.
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