Low‐temperature selective epitaxy by ultrahigh‐vacuum chemical vapor deposition from SiH4and GeH4/H2
作者:
M. Racanelli,
D. W. Greve,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 58,
issue 19
页码: 2096-2098
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.104998
出版商: AIP
数据来源: AIP
摘要:
Selective epitaxy of GexSi1−xin an ultrahigh‐vacuum chemical vapor deposition reactor from SiH4and GeH4/H2is reported for the first time. Growth is performed at 600 °C on patterned wafers after an 800 °C bake which provides a clean silicon surface. Selective growth is maintained during a short incubation time. GeH4/H2is found to increase the incubation time and the growth rate improving selectivity. Diodes fabricated from selectively grown films demonstrate high material and film/oxide interface quality.
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