Low resistance Ohmic contact scheme (∼&mgr;&OHgr;cm2) top-InP
作者:
Moon-Ho Park,
L. C. Wang,
J. Y. Cheng,
C. J. Palmstro&slash;m,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 1
页码: 99-101
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119320
出版商: AIP
数据来源: AIP
摘要:
A low resistance Pd/Sb/Zn/Pd Ohmic contact based on the solid phase regrowth principle has been investigated top-InP. Contact resistivity as low as∼2×10−6 &OHgr; cm2has been obtained for samples annealed at 500 °C for 1 min. The Ohmic behavior can be rationalized by the formation of a heavily doped surface layer or a heterojunction. The InSb phase responsible for the observed low resistivity is identified using the x-ray diffraction technique. ©1997 American Institute of Physics.
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