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Rates of dissociative attachment of electrons to excited H2and D2

 

作者: J. M. Wadehra,  

 

期刊: Applied Physics Letters  (AIP Available online 1979)
卷期: Volume 35, issue 12  

页码: 917-919

 

ISSN:0003-6951

 

年代: 1979

 

DOI:10.1063/1.91023

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Calculations are reported of the contributions of the lowest2&Sgr;+uand2&Sgr;+gresonant states to the rates of dissociative attachment of electrons to H2and D2. For all electron temperatures, the rate is significantly enhanced by vibrational and rotational excitation of the initial molecule. Typically, for an electron temperature of 1.5 eV, the attachment rates for various (v,J) levels are, in cm3 sec−1, 5.4×10−15for (0,0), 7.2×10−11for (0,20), and 7.8×10−9for (8,0), for H2; and 4.5×10−17for (0,0), 1.4×10−14for (0,20), and 6.0×10−9for (11,0), for D2.

 

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