Selective saturation of paramagnetic defects in electron‐ and neutron‐irradiated GaAs
作者:
A. Goltzene,
B. Meyer,
C. Schwab,
R. B. Beall,
R. C. Newman,
J. E. Whitehouse,
J. Woodhead,
期刊:
Journal of Applied Physics
(AIP Available online 1985)
卷期:
Volume 57,
issue 12
页码: 5196-5198
ISSN:0021-8979
年代: 1985
DOI:10.1063/1.335256
出版商: AIP
数据来源: AIP
摘要:
A comparison of the electron paramagnetic resonance spectra obtained in fast neutron‐ and electron‐irradiated GaAs crystals has confirmed the simultaneous presence of the quadruplet and singlet spectra, ascribed previously to As4+Gaand V2−Gacenters. Only in electron‐irradiated material, however, are both signals separated by the selective microwave power saturation of the quadruplet. This apparent disparity is ascribed to a difference in the coupling between the two partners in the As4+Ga‐V2−Gaassociated complexes.
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