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Selective saturation of paramagnetic defects in electron‐ and neutron‐irradiated GaAs

 

作者: A. Goltzene,   B. Meyer,   C. Schwab,   R. B. Beall,   R. C. Newman,   J. E. Whitehouse,   J. Woodhead,  

 

期刊: Journal of Applied Physics  (AIP Available online 1985)
卷期: Volume 57, issue 12  

页码: 5196-5198

 

ISSN:0021-8979

 

年代: 1985

 

DOI:10.1063/1.335256

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A comparison of the electron paramagnetic resonance spectra obtained in fast neutron‐ and electron‐irradiated GaAs crystals has confirmed the simultaneous presence of the quadruplet and singlet spectra, ascribed previously to As4+Gaand V2−Gacenters. Only in electron‐irradiated material, however, are both signals separated by the selective microwave power saturation of the quadruplet. This apparent disparity is ascribed to a difference in the coupling between the two partners in the As4+Ga‐V2−Gaassociated complexes.

 

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