The damage behavior of Si induced by MeV Ge+under tilted angle has been studied. In order to investigate the effect of implanted energy and angle on the damage distribution, the energies were varied from 1 to 2 MeV and the angles were varied from 7° to 60°. The experimental damage distribution is extracted based on the procedure by Feldman and Rodgers [L. E. Feldman and J. W. Rodgers, J. Appl. Phys.41, 3776 (1970)] using the multiple‐scattering model. The experimental data obtained are compared with the TRIM’90 code. The results show that the lateral damage spread can not be neglected; the shape and the depth of damage distribution are well described by the TRIM’90 code under tilted angle irradiation for Si(100).