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Monte Carlo calculations on spatial distribution of implanted ions in silicon

 

作者: A. Desalvo,   R. Rosa,  

 

期刊: Radiation Effects  （Taylor Available online 1976）
卷期: Volume 31, issue 1  

页码: 41-45

 

ISSN:0033-7579

 

年代: 1976

 

DOI:10.1080/00337577608234778

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

The Monte Carlo technique has been applied to simulate the trajectories of ions implanted into an amorphous target. By this method much information about the spatial distribution of ions is obtained in a straightforward way: the results show a good agreement with the experiments available in current literature.

 

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