n-type high-conductive epitaxial diamond film prepared by gas source molecular beam epitaxy with methane and tri-n-butylphosphine
作者:
Toshihiko Nishimori,
Koji Nakano,
Hitoshi Sakamoto,
Yuji Takakuwa,
Shozo Kono,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 7
页码: 945-947
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119922
出版商: AIP
数据来源: AIP
摘要:
Ann-type phosphorous (P) doped epitaxial diamond film with high conductivity was grown on a C(001) substrate by gas source molecular beam epitaxy using methane and tri-n-butylphosphine. The electrical conductivity of the diamond film was measured to be 0.33(&OHgr; cm)−1at 23 °C with its activation energy to be 0.12 eV. The Hall measurements showedn-type conduction and a carrier concentration of1.6×1018cm−3at 400 °C, which is comparable to the P concentration determined by secondary-ion-mass spectroscopy. These indicate the formation of shallow P donors with high electrical activation efficiency. Ap-njunction diode was fabricated by growing a P-doped epitaxial film on a boron-doped C(001) substrate, which showed for the first time a rectification ratio of∼103at 10 V. ©1997 American Institute of Physics.
点击下载:
PDF
(133KB)
返 回