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The structural disorder model: Pressure induced transitions in the semiconductors Si and Ge

 

作者: P. K. Dixit,   B. A. Vaid,   K. C. Sharma,  

 

期刊: physica status solidi (b)  （WILEY Available online 1986）
卷期: Volume 133, issue 1  

页码: 71-74

 

ISSN:0370-1972

 

年代: 1986

 

DOI:10.1002/pssb.2221330108

 

出版商: WILEY‐VCH Verlag

 

数据来源: WILEY

 

摘要:

AbstractThe structural disorder model, recently proposed by the authors to explain the thermodynamic properties near the transitions of first order, is generalized to include the pressure induced transition in the semiconductors Ge and Si. The calculated values show at least a in order of magnitude agreement with the experimental data.

 

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