Nonlinear transport phenomena in a triangular quantum well
作者:
A. Kastalsky,
F. Peeters,
W. K. Chan,
L. T. Florez,
J. P. Harbison,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 14
页码: 1708-1710
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.106225
出版商: AIP
数据来源: AIP
摘要:
We have measured transport properties in an AlGaAs/AlxGa1−xAs, triangular quantum well whose energy spectrum has been varied by means of gate bias. We have observed several nonlinear effects in the lateral conductance arising at positive gate voltages as the increasing Fermi level is moved toward the lowering energy positions of the excited subbands in the quantum well. We interpret our results in terms of electron population of the excited subbands in which electrons possess low mobility. Finally, we find new features at high lateral voltages which are considered to be an evidence of previous predicted electrophonon resonance.
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