首页   按字顺浏览 期刊浏览 卷期浏览 Reduction in linewidth enhancement factor for In0.2Ga0.8As/ GaAs/Al0.5Ga0.5As strained ...
Reduction in linewidth enhancement factor for In0.2Ga0.8As/ GaAs/Al0.5Ga0.5As strained quantum well lasers

 

作者: S. Banerjee,   A. K. Srivastava,   Naresh Chand,  

 

期刊: Applied Physics Letters  （AIP Available online 1991）
卷期: Volume 58, issue 20  

页码: 2198-2199

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.104925

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The linewidth enhancement factor &agr; as low as 0.54 in In0.2Ga0.8As/GaAs/AlGaAs strained single quantum well lasers emitting at 0.97 &mgr;m has been measured from spontaneous emission spectra below threshold. On reducing the current further, &agr; goes down to 0.34. These low values of &agr; have been attributed to strain in the In0.2Ga0.8As active layer.

 

点击下载:  PDF (229KB)



返 回