首页   按字顺浏览 期刊浏览 卷期浏览 Remarkable effects in wet‐etched GaAs/GaAlAs rings
Remarkable effects in wet‐etched GaAs/GaAlAs rings

 

作者: K. Y. Lee,   D. P. Kern,   K. Ismail,   S. Washburn,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1991）
卷期: Volume 9, issue 6  

页码: 2834-2837

 

ISSN:1071-1023

 

年代: 1991

 

DOI:10.1116/1.585651

 

出版商: American Vacuum Society

 

关键词: ETCHING;LITHOGRAPHY;ELECTRON BEAMS;GALLIUM ARSENIDES;ALUMINIUM ARSENIDES;AHARONOV−BOHM EFFECT;RINGS;ELECTRON GAS;TWO−DIMENSIONAL SYSTEMS;HETEROSTRUCTURES;FABRICATION;MAGNETORESISTANCE;ULTRALOW TEMPERATURE;GaAs;(AlGa)As

 

数据来源: AIP

 

摘要:

Coupled GaAs/GaAlAs rings have been fabricated using electron‐beam lithography and wet chemical etching. We report the first observation of conductance steps associated withe2/hin etched structures, and clear Aharonov–Bohm oscillations in multiple rings connected in parallel. The amplitude of the oscillations is found to be dependent on the number of rings indicating the possibility of phase coupling between electrons traversing different rings.

 

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