The concentric circle pattern of growth striations in Czochralski (CZ) silicon wafer has been found to cause the fixed pattern noise in the reproduced image by solid‐state imagers with thep‐well structure. The microgrowth striations of dopant impurities in 4‐in.n‐type CZ silicon wafers have been examined in terms of noise video signals ofp‐well Charge Priming Device imagers. Striation periods as narrow as 10 &mgr;m can be revealed, which may be overlooked by the conventional spreading resistance method.