Recovery Currents in Germaniump—nJunction Diodes
作者:
R. G. Shulman,
M. E. McMahon,
期刊:
Journal of Applied Physics
(AIP Available online 1953)
卷期:
Volume 24,
issue 10
页码: 1267-1272
ISSN:0021-8979
年代: 1953
DOI:10.1063/1.1721146
出版商: AIP
数据来源: AIP
摘要:
When a germaniump—njunction biased in the forward direction has a reverse voltage suddenly applied, a large transient current flows during the ``recovery time.'' A proposed mechanism for this current involving diffusion of stored minority carriers to the barrier is compared with experimental results. Since the current is related to the diode forward direction characteristics these are examined. Finally a variable time delay utilizing the recovery current effect is discussed.
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