首页   按字顺浏览 期刊浏览 卷期浏览 Explosive recrystallization during pulsed laser irradiation
Explosive recrystallization during pulsed laser irradiation

 

作者: J. Narayan,   S. J. Pennycook,   D. Fathy,   O. W. Holland,  

 

期刊: Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films  （AIP Available online 1984）
卷期: Volume 2, issue 4  

页码: 1495-1497

 

ISSN:0734-2101

 

年代: 1984

 

DOI:10.1116/1.572390

 

出版商: American Vacuum Society

 

关键词: RECRYSTALLIZATION;SILICON;PHOTON COLLISIONS;MICROSTRUCTURE;ELECTRON MICROSCOPY;BACKSCATTERING;LIQUIDS;THIN FILMS;SEGREGATION;COPPER;ATOM TRANSPORT;ION IMPLANTATION;COPPER IONS;SILICON IONS;LAYERS;IMPURITIES;Si

 

数据来源: AIP

 

摘要:

The phenomenon of explosive recrystallization has been studied in Si+and Cu+implanted amorphous silicon layers by electron microscopy and Rutherford backscattering techniques (RBS). Cross‐section and plan‐view electron microscopy techniques (TEM) have been used to obtain a detailed characterization of microstructures associated with the explosive mode of recrystallization. RBS and analytical TEM studies on segregation of copper provided information on the mechanism of explosive recrystallization involving a thin liquid film interposed between crystallized and uncrystallized regions.

 

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