Ion-beam processes are still at the developmental stage, except for the use of wide-area beams for ion implantation which has led to a continued miniaturization of semiconductor devices, resulting in an increase in speed as well as in device complexity. However, ionized beams are also highly suitable for material modification by sputter-deposition, ion milling, lithography, ion microscopy and materials analysis. Evaluation of the optimum physical parameters in these ion-beam processes would significantly improve the utilization of ion beams.