The Hall coefficient and resistivity of Hg1−xCdxTe epitaxial layers with 0.195<x<0.351, have been measured between 4 and 300 K. At 77 K the results forx=0.30 show that as‐grown epitaxial layers areptype, with a carrier concentration and mobility on the order of 1.2×1016cm−3and 400 cm2/V s, respectively. The acceptor ionization energy determined by the Hall measurements is found to change with the energy gap of Hg1−xCdxTe . The electrical parameters and compositional uniformity (&Dgr;x=±0.001) of the epilayer forx=0.30 indicate that the material is comparable to the best reported bulk Hg1−xCdxTe single crystal.