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Number of voids formed on a line: Parameter for electromigration lifetime

 

作者: Kenji Hinode,   Seiichi Kondo,   Osamu Deguchi,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1996）
卷期: Volume 14, issue 2  

页码: 687-690

 

ISSN:1071-1023

 

年代: 1996

 

DOI:10.1116/1.589157

 

出版商: American Vacuum Society

 

关键词: TUNGSTEN NITRIDES;TITANIUM NITRIDES;ALUMINIUM;SILICON ADDITIONS;TUNGSTEN;TITANIUM;MICROSTRUCTURE;VOIDS;ELECTROPHORESIS;ELECTRIC CONDUCTIVITY;Al:Si;WN;TiN;W;Ti

 

数据来源: AIP

 

摘要:

Electromigration study of various layer‐structured aluminum conductors with three widths revealed that lifetime (defined as a 1% resistance increase) depends on two critical parameters: the grain size/conductor width ratio and the grain orientation. These two parameters work independently and monotonically. Investigation of the number and size of voids formed by electromigration showed that lifetime is proportional to the square of the number of voids. This relationship is independent of linewidth and current density.

 

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