首页
按字顺浏览
期刊浏览
卷期浏览
Surface-reconstruction-enhanced solubility of N, P, As, and Sb in III-V semiconductors
|
Surface-reconstruction-enhanced solubility of N, P, As, and Sb in III-V semiconductors
作者:
S. B. Zhang,
Alex Zunger,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 5
页码: 677-679
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119827
出版商: AIP
数据来源: AIP
摘要:
We show that surface reconstructions may play an essential role in determining the equilibrium solubilities of N, P, As, and Sb in various III-V compounds. In particular, anion–anion dimerization of the(001)-&bgr;2(2×4)surface can enhance the solubility of N near the surface in GaAs, GaP, and InP by five, three, and two orders of magnitudes, respectively, at 1000 K. With certain assumptions on the growth kinetics, this high concentration of N may be frozen in as the crystal grows. ©1997 American Institute of Physics.
点击下载:
PDF
(92KB)
返 回
|
|