Longitudinal‐optical‐phonon assisted tunneling in tunneling bi‐quantum well structures
作者:
Shunichi Muto,
Tsuguo Inata,
Atsushi Tackeuchi,
Yoshihiro Sugiyama,
Toshio Fujii,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 58,
issue 21
页码: 2393-2395
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.104881
出版商: AIP
数据来源: AIP
摘要:
We discuss the electron tunneling time observed in a new AlGaAs/GaAs superlattice structure, the tunneling bi‐quantum well (TBQ). To calculate the nonresonant tunneling time, we made experiments on resonant tunneling to confirm that the 60% rule of conduction‐band discontinuity accurately evaluates the free tunneling probability of electrons. We found that the observed recovery time agrees quite well with the calculated longitudinal optical phonon emission tunneling time for thin (≤ 10 monolayers) barriers.
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