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High‐speed and high‐power 1.3‐&mgr;m InGaAsP buried crescent injection lasers with semi‐insulating current blocking layers

 

作者: W. H. Cheng,   C. B. Su,   K. D. Buehring,   S. Y. Huang,   J. Pooladdej,   D. Wolf,   D. Perrachione,   D. Renner,   K. L. Hess,   S. W. Zehr,  

 

期刊: Applied Physics Letters  （AIP Available online 1987）
卷期: Volume 51, issue 22  

页码: 1783-1785

 

ISSN:0003-6951

 

年代: 1987

 

DOI:10.1063/1.98521

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The fabrication and performance of high‐speed and high‐power 1.3‐&mgr;m InGaAsP buried crescent lasers with semi‐insulating current blocking layers are reported. A modulation bandwidth of 11 GHz and acw output power of 42 mW/facet have been achieved. An approximate circuit model of the semi‐insulating buried crescent laser, which describes the effect of dc bias on parasitic capacitance at high‐speed operation, is also presented.

 

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