ORIENTED GROWTH OF THE INTERFACIAL PtSi LAYER OR BETWEEN Pt AND Si
作者:
T. Kawamura,
D. Shinoda,
H. Muta,
期刊:
Applied Physics Letters
(AIP Available online 1967)
卷期:
Volume 11,
issue 3
页码: 101-103
ISSN:0003-6951
年代: 1967
DOI:10.1063/1.1755035
出版商: AIP
数据来源: AIP
摘要:
The oriented growth of the interfacial PtSi layer between Pt and Si is described. Sputtered Pt onto the (111) Si wafer reacts with Si above 600°C to form PtSi. The interfacial PtSi has the preferred orientation characteristic of the temperature of heat treatment, varying the orientation from [101] at 600°C and 700°C, through [121] at 750°C, to [001] at 800°C. A possible growth mechanism of the interfacial PtSi is proposed on the basis of the atomic layer sequence of each crystallographic direction.
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