Theoretical expressions based on the Boltzmann transport equation, nondegenerate statistics, and Poisson's equation are derived for the electrical conductivity of extrinsic semiconductor films. The theoretical conductivity is presented as a function of film thickness and Fuch's scattering indices for the nondegeneraten‐ orp‐type semiconducting films. The analysis predicts that the conductivity of thin films having quasisymmetrical space‐charge layers at the surfaces should be strongly dependent upon the excess carrier density in these layers even under conditions of specular surface scattering. The limited amount of conductivity data reported for epitaxial germanium films are interpreted using the extrinsic film model. Universal curves are presented for normalized film conductivity as a function of normalized film thickness for accumulatedn‐ andp‐type films and depletedn‐ andp‐type films having specularly scattering surfaces. The general case analysis yields the symmetrical and flat‐band results as previously reported. The symmetrical‐field case is briefly reviewed as an aid for comparison.