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Dry etching of palladium thin films in fluorine containing plasmas: X‐ray photoelectron spectroscopy investigation

 

作者: F. Fracassi,   R. d’Agostino,   A. Cacucci,  

 

期刊: Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films  （AIP Available online 1995）
卷期: Volume 13, issue 1  

页码: 63-66

 

ISSN:0734-2101

 

年代: 1995

 

DOI:10.1116/1.579444

 

出版商: American Vacuum Society

 

关键词: PALLADIUM;THIN FILMS;ETCHING;GLOW DISCHARGES;ARGON;OXYGEN;CARBON TETRAFLUORIDE;PHOTOELECTRON SPECTROSCOPY;SPUTTERING;Pd

 

数据来源: AIP

 

摘要:

The dry etching process of palladium thin films has been investigated in Ar–CF4and Ar–CF4–O2glow discharges by performing etch rate measurements and x‐ray photoelectron spectroscopic analyses. The results indicate that the process is one of physical sputtering and that fluorine atoms react with palladium forming a fluorinated layer (probably PdF) which is characterized by a lower sputtering rate than that of metallic palladium.

 

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