For amorphous SiO2and Si3N4the Auger spectra were measured and an interpretation of the Si(LVV) spectra is given based upon electron energy‐level schemes, derived from electron energy‐loss spectroscopy results obtained at the same samples. For Si‐nitride the effect of oxygen content (O/N from 0.02 to 1) and Ar+ion bombardment was studied and it is shown that discrepancies between the spectra of different authors are mainly due to these effects.