Photocapacitance effects of deep traps inn‐type InP
作者:
S. H. Chiao,
G. A. Antypas,
期刊:
Journal of Applied Physics
(AIP Available online 1978)
卷期:
Volume 49,
issue 1
页码: 466-468
ISSN:0021-8979
年代: 1978
DOI:10.1063/1.324364
出版商: AIP
数据来源: AIP
摘要:
Deep trapping centers inn‐type InP samples grown by the liquid‐encapsulated Czochralski, liquid‐phase‐epitaxial, and vapor‐phase‐epitaxial processes have been studied by photocapacitance techniques. Photocapacitance effects for Schottky barriers formed on these samples indicate four levels at 0.58, 0.78, 0.89, and 1.15 eV below the conduction band. Estimated trap concentration in various samples range from low‐1014cm−3to the high‐1012cm−3. The broad increase in photocapacitance near 1.15 eV for all the samples may be associated with an intrinsic defect or phosphorus vacancy/impurity complexes. This result is consistent with the broadband present between 1.08 and 1.25 eV in photoluminescence experiments. The comparison between O2‐doped and undoped VPE samples suggests the presence of oxygen located at about 0.78 eV below the conduction band in VPE material.
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