Persistent photoquenching and anion antisite defects in neutron‐irradiated GaAs
作者:
A. Goltzene,
B. Meyer,
C. Schwab,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 54,
issue 10
页码: 907-909
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.100804
出版商: AIP
数据来源: AIP
摘要:
A potential origin for the reported discrepancies on the low‐temperature photosensitivity of particle‐induced anion antisites in GaAs is revealed by a systematic study of the relative fraction of photoquenchable paramagnetic As4+Gacenters as a function of neutron fluence and annealing temperature. The electron paramagnetic resonance data show that the As4+Gacenters can be split into two subsets.
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