Flow rate modulation epitaxy of AlGaAs/GaAs quantum wires on nonplanar substrate
作者:
Xue‐Lun Wang,
Mutsuo Ogura,
Hirofumi Matsuhata,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 12
页码: 1506-1508
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113670
出版商: AIP
数据来源: AIP
摘要:
Flow rate modulation epitaxy (FME) is applied to the low‐temperature growth of AlGaAs/GaAs quantum wires (QWRs) on nonplanar substrates. The growth selectivity is found to be enhanced greatly by the use of FME, as compared with the conventional metalorganic chemical vapor deposition due to the enhanced migration of Ga species. An AlGaAs/GaAs QWR with a central thickness of about 9 nm and a lateral width of about 28 nm is grown at 600 °C on a V‐grooved substrate. Good photoluminescence properties are observed from the grown QWR, with the peak energy being in good agreement with the calculated energy level of a parabolic shape lateral confinement potential. ©1995 American Institute of Physics.
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