We demonstrate that the ability of GaN-based light-emitting diodes to emit in the short-wavelength regime makes possible “hybrid” organic–inorganic semiconductor light-emitting diodes that consist of two parts: a GaN-based electroluminescent part and an organic thin-film-based fluorescent part that absorbs the electroluminescence and fluoresces at a longer wavelength resulting in color conversion. We also show that organic films with much improved surface smoothness may be obtained by deposition at reduced temperatures. ©1997 American Institute of Physics.