p‐type doping of CdTe with a nitrogen plasma source
作者:
S. Oehling,
H. J. Lugauer,
M. Schmitt,
H. Heinke,
U. Zehnder,
A. Waag,
C. R. Becker,
G. Landwehr,
期刊:
Journal of Applied Physics
(AIP Available online 1996)
卷期:
Volume 79,
issue 5
页码: 2343-2346
ISSN:0021-8979
年代: 1996
DOI:10.1063/1.361160
出版商: AIP
数据来源: AIP
摘要:
We report here on the growth and the characterization ofp‐type CdTe grown by molecular beam epitaxy on (001) Cd0.96Zn0.04Te substrates. Nitrogen has been used as a dopant, which is activated in an electron cyclotron resonance plasma source. The carrier concentration was determined using a C/V profiler. Nitrogen has been successfully incorporated substitutionally and hole densities up to 2.6×1017cm−3have been achieved. In addition we present data from x‐ray diffraction and photoluminescence, which demonstrate the effect of self‐compensation on the nitrogen‐doped CdTe layers. ©1996 American Institute of Physics.
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