Scanning tunneling microscopy and potentiometry on a semiconductor heterojunction
作者:
P. Muralt,
H. Meier,
D. W. Pohl,
H. W. M. Salemink,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 50,
issue 19
页码: 1352-1354
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.97853
出版商: AIP
数据来源: AIP
摘要:
The potential distribution across the cleaved end face of a forward‐biased GaAs double heterojunction laser diode was mapped using scanning tunneling potentiometry. Space‐charge regions next to the heterojunction interface as well as the electron‐hole recombination region within the active layer are outlined with nanometer resolution. The carrier injection zone in the active layer is observed as a function of junction voltage.
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