Contact reaction between Si and rare earth metals
作者:
R. D. Thompson,
B. Y. Tsaur,
K. N. Tu,
期刊:
Applied Physics Letters
(AIP Available online 1981)
卷期:
Volume 38,
issue 7
页码: 535-537
ISSN:0003-6951
年代: 1981
DOI:10.1063/1.92442
出版商: AIP
数据来源: AIP
摘要:
Reactions between Si and thin films of rare‐earth metals (Gd, Dy, Ho, Er, plus Y and La) in the temperature range of 275–900 °C have been studied by using x‐ray diffraction and ion backscattering spectrometry. The disilicides of these metals are apparently the first phase to form, forming rapidly within a narrow temperature range (325–400 °C), and are stable up to 900 °C. The growth does not follow a layered growth mode.
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