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Recent progress on LADA growth of HgCdTe and CdTe epitaxial layers

 

作者: J. T. Cheung,   T. Magee,  

 

期刊: Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films  （AIP Available online 1983）
卷期: Volume 1, issue 3  

页码: 1604-1607

 

ISSN:0734-2101

 

年代: 1983

 

DOI:10.1116/1.572276

 

出版商: American Vacuum Society

 

关键词: epitaxial layers;annealing;photodiodes;heterojunctions;x−ray diffraction;photoluminescence;reflectivity;ultraviolet radiation;transmission electron microscopy;epitaxy;laser radiation;coatings

 

数据来源: AIP

 

摘要:

Laser assisted deposition (LADA) has been used to deposit epitaxial Hg0.7Cd0.3Te layers on CdTe substrates and CdTe layers on GaAs substrates. As‐ grown Hg0.7Cd0.3Te layers aren‐type and can be converted top‐type by annealing. Implantedn+/pphotodiodes have been demonstrated. Heteroepitaxial (111)CdTe/(100) GaAs layers were characterized by x‐ray diffraction, UV reflectance, photoluminescence, and transmission electron microscopy (TEM). Results indicate good crystallinity with 105cm−2dislocation densities beyond a few microns from the CdTe/GaAs interface.

 

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