Tunneling and impact ionization at high electric fields in abrupt GaAsp-i-nstructures
作者:
C. Benz,
M. Claassen,
D. Liebig,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 7
页码: 3181-3185
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.364147
出版商: AIP
数据来源: AIP
摘要:
GaAsp-i-nstructures with very abrupt doping transitions and different lengths of the quasi-intrinsic zone have been fabricated by molecular beam epitaxy technology. For structures with ultra-thin intrinsic zones, tunnel currents were determined experimentally up to electric fields of 1.9 MV/cm, in good agreement with a modified Kane model. The difference of calculated tunnel current and measured total current in structures which also perform impact ionization is used to fit a Monte Carlo simulation program at high electric fields. Resulting idealized homogeneous-field ionization rates are given which are experimentally verified up to fields of 1.3 MV/cm. ©1997 American Institute of Physics.
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