InAsSbP/InAsSb/InAs laser diodes (&lgr;=3.2 &mgr;m) grown by low-pressure metal–organic chemical-vapor deposition
作者:
J. Diaz,
H. Yi,
A. Rybaltowski,
B. Lane,
G. Lukas,
D. Wu,
S. Kim,
M. Erdtmann,
E. Kaas,
M. Razeghi,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 1
页码: 40-42
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119298
出版商: AIP
数据来源: AIP
摘要:
We report metal–organic chemical-vapor deposition-grown double heterostructure InAsSbP/InAsSb/InAs diode lasers emitting at 3.2 &mgr;m operating at temperatures up to 220 K with threshold current density of 40A/cm2at 77 K and characteristic temperature up to 42 K. Output powers as high as 260 mW in pulse mode and 60 mW in continuous wave operation have been obtained from an uncoated 100 &mgr;m stripe-width broad-area laser at 77 K. Comparison with theory shows that there is no significant nonradiative recombination mechanism for these lasers at 77 K. ©1997 American Institute of Physics.
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