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A method for calculating Fermi energy and carrier concentrations in semiconductors

 

作者: T. K. Gaylord,   J. N. Linxwiler,  

 

期刊: American Journal of Physics  （AIP Available online 1976）
卷期: Volume 44, issue 4  

页码: 353-355

 

ISSN:0002-9505

 

年代: 1976

 

DOI:10.1119/1.10194

 

出版商: American Association of Physics Teachers

 

数据来源: AIP

 

摘要:

An efficient numerical method is described for calculating the Fermi energy, the free electron and free hole concentrations, and the ionized impurity concentrations in a semiconductor material. The method allows freedom with respect to type of material, temperature, and amount and type of donor and acceptor impurities.

 

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