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Electron spin resonance study of high field stressing in metal‐oxide‐silicon device oxides

 

作者: W. L. Warren,   P. M. Lenahan,  

 

期刊: Applied Physics Letters  （AIP Available online 1986）
卷期: Volume 49, issue 19  

页码: 1296-1298

 

ISSN:0003-6951

 

年代: 1986

 

DOI:10.1063/1.97391

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We find that two paramagnetic ‘‘trivalent silicon’’ centers appear to be responsible for damage resulting from Fowler–Nordheim injection of electrons into thermal oxides on silicon.

 

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