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Epitaxially stacked lasers with Esaki junctions: A bipolar cascade laser

 

作者: J. Ch. Garcia,   E. Rosencher,   Ph. Collot,   N. Laurent,   J. L. Guyaux,   B. Vinter,   J. Nagle,  

 

期刊: Applied Physics Letters  （AIP Available online 1997）
卷期: Volume 71, issue 26  

页码: 3752-3754

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.120408

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We present a two-color (956 and 985 nm) InGaAs/AlGaAs laser structure epitaxially stacked through a low-resistance(10−5–10−4 &OHgr; cm2)Esaki junction, exhibiting two threshold characteristics. It is shown that this structure can be considered as a bipolar cascade laser. ©1997 American Institute of Physics.

 

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