The electrical transport properties between 80 and 300 K of polycrystalline samples of (CuIn)1−zMn2zTe2semimagnetic semiconducting alloys are studied. These are found to have disordered chalcopyrite &agr;(z≤0.1), ordered chalcopyrite &agr;’(0.1<z≤0.25), and ordered zinc‐blende &bgr;’(0.25<z≤0.57) structures. From an analysis of the electrical data, the values of the activation energyEA, density of states effective mass of the holesmp, valence‐band deformation potentialEac, and the concentration of the ionized impuritiesNifor the alloys are estimated. The linear behavior is observed ofmpwithz, with a discontinuity when the structure of the alloys changes from &agr;’to &bgr;’. However, the extrapolated value ofmpatz=0 from the region of chalcopyrite structure is in close agreement with that ofp‐type CuInTe2. On the other hand, the deformation potential of the valence‐band varies linearly withz.