Liquid Source Chemical Vapor Deposition (LSCVD) involves the use of sub-saturated aerosols of specially designed metallorganic precursors suitable for multicomponent oxide deposition in vacuum at room temperature. Materials of interest for ULSI DRAMs, such as Ba(1−x)SrxTiO3and SrTiO3show uniform deposition with microstructures optimized for step-coverage and small capacitor geometries. Electrical characteristics indicate capacitance densities of around 25–30 fF/um2and leakages in the order of 10−8A/um2. A review of these results and the LSCVD technique will be presented.