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Dose dependence of the photon emission from sputtered aluminum atoms during helium irradiation

 

作者: M. Braun,   B. Emmoth,  

 

期刊: Applied Physics Letters  (AIP Available online 1976)
卷期: Volume 29, issue 9  

页码: 545-547

 

ISSN:0003-6951

 

年代: 1976

 

DOI:10.1063/1.89178

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Polycrystalline aluminum samples are irradiated with 40‐keV He+. At moderate target temperatures (∼0.3Tm) a prominent and distinct enhancement of the light intensity from sputtered excited aluminum atoms is observed after implantation to a critical dose of 4×1017He+/cm2. It is shown that this effect is associated with a sudden increase in the erosion rate of Al and in the surface exfoliation due to radiation blistering. At higher target temperatures (∼0.7Tm) a less pronounced increase in the photon intensity and a different surface structure is observed.

 

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