Structure and Origin of Stacking Faults in Epitaxial Silicon
作者:
R. H. Finch,
H. J. Queisser,
G. Thomas,
J. Washburn,
期刊:
Journal of Applied Physics
(AIP Available online 1963)
卷期:
Volume 34,
issue 2
页码: 406-415
ISSN:0021-8979
年代: 1963
DOI:10.1063/1.1702622
出版商: AIP
数据来源: AIP
摘要:
Light optical and transmission electron microscopy on epitaxially deposited silicon crystals in [100], [110], and [111] orientation show that growth stacking faults are formed regardless of orientation. These faults occur in bundles of usually tetrahedral figures with the apices at the substrate‐film interface, and some faults may exist as closed intrinsic‐extrinsic pairs. The results suggest that faults are nucleated by oxygen contamination. Some evidence for impurity segregation to faults is also presented.
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